bc 846u pn apr-22-1999 1 npn/pnp silicon af transistor array ? for af input stages and driver applications ? high current gain ? low collector-emitter saturation voltage ? two (galvanic) internal isolated npn/pnp transistors in one package vpw09197 1 2 3 4 5 6 eha07177 6 54 3 2 1 c1 b2 e2 c2 b1 e1 tr1 tr2 type marking pin configuration package bc 846u pn 1os 1=e 2=b 3=c 4=e 5=b 6=c sc-74 maximum ratings parameter value symbol unit v collector-emitter voltage v ceo 65 collector-base voltage 80 v cbo collector-emitter voltage v ces v 80 v ebo v emitter-base voltage 5 ma dc collector current i c 100 200 peak collector current i cm total power dissipation , t s = 118 c mw p tot 250 t j 150 junction temperature c -65 ... 150 storage temperature t st g thermal resistance junction ambient 1) r thja 400 k/w junction - soldering point r thjs 130 1) package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 cu
bc 846u pn apr-22-1999 2 electrical characteristics at t a =25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics per transistor collector-emitter breakdown voltage i c = 10 ma, i b = 0 v - v (br)ceo - 65 collector-base breakdown voltage i c = 10 a, i b = 0 - - v (br)cbo 80 collector-emitter breakdown voltage i c = 10 a, v be = 0 v (br)ces 80 v - - emitter-base breakdown voltage i e = 10 a, i c = 0 - - v (br)ebo 5 collector cutoff current v cb = 30 v, i e = 0 15 na - i cbo - a collector cutoff current v cb = 30 v, i e = 0 , t a = 150 c - - i cbo 5 h fe - 200 - 450 250 290 dc current gain 1) i c = 10 a, v ce = 5 v i c = 2 ma, v ce = 5 v - mv 300 650 collector-emitter saturation voltage1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma - - 90 200 v cesat base-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma 700 900 v besat - - - - base-emitter voltage 1) i c = 2 ma, v ce = 5 v i c = 10 ma, v ce = 5 v v be(on) 580 - 660 - 750 820 1) pulse test: t < 300 s; d < 2%
bc 846u pn apr-22-1999 3 electrical characteristics at t a =25c, unless otherwise specified parameter symbol unit values min. typ. max. ac characteristics per transistor transition frequency i c = 20 ma, v ce = 5 v, f = 100 mhz - - mhz 250 f t 2 c cb collector-base capacitance v cb = 10 v, f = 1 mhz - - pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz - 10 c eb - short-circuit input impedance i c = 2 ma, v ce = 5 v, f = 1 khz 4.5 k ? - h 11e - - open-circuit reverse voltage transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz 2 - 10 -4 h 12e short-circuit forward current transf.ratio i c = 2 ma, v ce = 5 v, f = 1 khz - - 330 - h 21e open-circuit output admittance i c = 2 ma, v ce = 5 v, f = 1 khz h 22e - 30 - s
bc 846u pn apr-22-1999 4 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 20 40 60 80 100 120 c 150 t a ,t s 0 50 100 150 200 mw 300 p tot t s t a permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 p totmax / p totdc d=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs d=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0
bc 846u pn apr-22-1999 5 collector-base capacitance c cb = f ( v cbo ) emitter-base capacitance c eb = f ( v ebo ) 0 4 10 5 10 10 ehp00361 v cb0 c eb0 v 6 2 eb0 v eb c 8 10 pf 12 cb0 c -1 0 1 c cb ( ( ) bc 846...850 ) transition frequency f t = f ( i c ) v ce = 5v 10 10 10 10 ehp00363 f ma mhz -1 0 1 2 5 t 3 10 10 2 1 10 5 5 5 c collector cutoff current i cbo = f ( t a ) v cb = 30v 10 0 50 100 150 ehp00381 t a 5 10 10 na 10 cb0 5 5 5 10 10 4 3 2 1 0 -1 max typ c collector-emitter saturation voltage i c = f ( v cesat ), h fe = 20 10 0 ehp00367 v cesat 10 ma 10 c 10 2 1 0 -1 5 5 v 0.3 0.5 100 25 -50 0.1 0.2 0.4 c c c
bc 846u pn apr-22-1999 6 dc current gain h fe = f ( i c ) v ce = 5v 10 10 10 10 ehp00365 h ma -2 -1 12 fe 3 10 10 2 0 10 5 5 10 1 0 10 5 555 100 25 -50 c c c c base-emitter saturation voltage i c = f (v besat ), h fe = 20 0 10 ehp00364 besat v 0.6 v 1.2 -1 10 0 10 1 2 10 5 5 c ma 0.2 0.4 0.8 c 25 c 100 c -50 c h parameter h e = f ( i c ) normalized v ce = 5v 10 10 10 ehp00368 ma -1 0 1 5 e h 2 10 -1 10 1 10 10 0 5 5 5 h 11e h 12e h 21e h 22e v ce = 5 v c h parameter h e = f ( v ce ) normalized i c = 2ma 0 0102030 ehp00369 v ce h e v 1.0 0.5 1.5 2.0 = 2 ma h h h h e e e e 21 11 12 22 c
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